nano-structural analysis of semiconductor materials
Quantitative Analysis of Electron Microscope Images
Electron Microscopy of Amorphous Materials
Growth Mechanism and Structure of Fine Particles
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論文 (67件):
Hitomi Mizutani, Koji Nishio, Katsumi Takahiro. Site-selective low-temperature growth of Au nanowires on Si substrates irradiated with low-energy Ar ions. Applied Surface Science. 2022. 604
Tsukasa Nagafusa, Yuya Hara, Koji Nishio, Toshiyuki Isshiki, Kenichi Yamashita. Broadband Optical Amplification of Waveguide Cut-Off Mode in Polymer Waveguide Doped with Graphene Quantum Dots. Advanced Optical Materials. 2022
Saki Imada, Toshiyuki Isshiki, Nobuyuki Tatemizo, Koji Nishio, Shuichi Mamishin, Yuya Suzuki, Katsuji Ito, Kiyofumi Nitta, Hiroki Suga, Oki Sekizawa, et al. Formation of various-axis-oriented wurtzite nuclei and enlargement of the: A -axis-oriented region in AlFeN films deposited on Si(100) substrates. Materials Advances. 2021. 2. 12. 4075-4080
Tsai Fu Chung, Masahiro Kawasaki, Phillip Wang, Koji Nishio, Makoto Shiojiri, Wei Chih Li, Chien Nan Hsiao, Jer Ren Yang. Atomic-resolution energy dispersive X-ray spectroscopy mapping of η precipitates in an Al-Mg-Zn-Cu alloy. Materials Characterization. 2020. 166
Nobuyuki Tatemizo, Saki Imada, Kizuna Okahara, Haruki Nishikawa, Kazuki Tsuruta, Toshiaki Ina, Yoshio Miura, Koji Nishio, Toshiyuki Isshiki. Electronic structure of AlFeN films exhibiting crystallographic orientation change from c- to a-axis with Fe concentrations and annealing effect. Scientific reports. 2020. 10. 1. 1819
Nobuyuki Tatemizo, Saki Sonoda, Koji Nishio, Toshiyuki Isshiki. Crystallographic Properties of 3d Transition Metal (Ti, V, and Cr) doped AlN films. 2016 COMPOUND SEMICONDUCTOR WEEK (CSW) INCLUDES 28TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM) & 43RD INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS (ISCS). 2016
Tomo Ide, Koji Nishio, Kazuo Takahashi. Nano-graphite formation enhanced by fluorine in gas phase of carbon sputtering plasmas. IEEE Region 10 Annual International Conference, Proceedings/TENCON. 2010. 158-163
Toshiyuki Isshiki, Koji Nishio, Takashi Sasaki, Hiroshi Harima, Masahiro Yoshimoto, Takashi Fukada, Woo Sik Yoo. High-resolution transmission electron microscopy of interfaces between thin nickel layers on Si(001) after nickel silicide formation under various annealing conditions. 14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006. 2006. 121-125