研究キーワード (2件)：
光機能素子材料
, Materials for Opto-Functional Device
競争的資金等の研究課題 (2件)：
1992 - GaAs/Si, GaN/Si及びInNエピタキシャル膜の高品質化
1992 - Fabrication of high-quality GaAs, GaN, InN epitaxial films on Si substrates
MISC (62件)：
Strong bandedge luminescence from InN films grown on Si Substrates by electron cyclotron resonance-assisted molecular beam, Tokuo Yodo, Hiroaki Yona, Hironori Ando, Daiki Nosei, Yoshiyuki Harada. Appl. Phys. Lett. 2002. 80(6), 968-970
Investigation of initial growth process for GaN heteroepitaxial layers grown on Si(001) and Si(111) substrates by ECR-assisted MBE, T.Yodo, H.Ando, D.Nosei, Y.Harada and M.Tamura. J. Cryst. Growth. 2002. 237-239, 1104-1109
Influences of substrate anneal before growth on initial growth process and charabteristics for GaN heteroepitaxial layers grown on Si(111) substrates by electron cyclotron resonance plasuma-assisted molecular-beam apitaxy, T.Yodo, M.Yamada, M.Araki, N.・・・. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B14, 37-40
Characterization of GaN layers grown on alkali metal-free glass substrates by molecular-beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, T.Hirano and Y.Harada. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B4, 13-16
Growth and characterizeition of InN heteroepitaxial layers grown on Si(111) substrates by molecular beam epitaxy assisted by electron cyclotron resonance plasma, T.Yodo, H.Yona, K.Iwai, N.Toyotomi and Y.Harada. 21th Electoronic Materials Symposium, Izu-Nagaoka, Extended Abstract. 2002. B3, 9-12
