アスバルジョエル

アスバルジョエル | ASUBAR JOEL

ホームページURL (1件)： https://sites.google.com/view/uf-electron-device-lab/home-%E3%83%9B%E3%83%BC%E3%83%A0

研究分野 (5件)：電子デバイス、電子機器 , 半導体、光物性、原子物理 , 薄膜、表面界面物性 , 結晶工学 , 電気電子材料工学

研究キーワード (8件)： Metal Insulator Semiconductor Structures , Gallium Nitride , MOCVD , AlGaN/GaN HEMTs , スピントロニクス , 電子デバイス , ヘテロ構造 , MBE成長

競争的資金等の研究課題 (7件)：

2023 - 2026 Study on high-K dielectric/regrown nitride semiconductor interfaces for high efficiency and highly-safe transistors
2023 - 2026 ミストCVD法を用いた窒化物半導体向けゲート絶縁膜堆積プロセス開発とMOSデバイス応用
2019 - 2022 Highly Stable Normally-off GaN-based transistors via Structures and Process
2019 - 2022 ミストCVD法による窒化物半導体の表面パッシベーション・絶縁ゲート構造の開発
2019 - 2022 準ミリ波帯で動作する窒化物半導体トランジスタ増幅器の高耐圧・高出力化に関する研究

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論文 (100件)：

Shogo Maeda, Shinsaku Kawabata, Itsuki Nagase, Ali Baratov, Masaki Ishiguro, Toi Nezu, Takahiro Igarashi, Kishi Sekiyama, Keito Shinohara, Melvin John, et al. Improved Performance of Normally-off GaN-based MIS-HEMTs with Recessed-gate and Ultrathin Regrown AlGaN Barrier. Journal of Semiconductor Technology and Science. 2024. 24. 1. 25-32
Akio Yamamoto, Ali Baratov, Masaaki Kuzuhara, Joel T Asubar. MOVPE growth of AlGaN on RIE-treated GaN surfaces and its application to AlGaN/GaN electron devices. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023
T Igarashi, S Maeda, A Baratov, JT Asubar, M Kuzuhara. AlGaN/GaN Schottky-Gate HEMTs with low thermal budget V/Al/Mo/Au ohmic contacts. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023
M Ishiguro, S Terai, K Sekiyama, S Urano, A Baratov, JT Asubar, M Kuzuhara. High performance normally-off recessed-gate GaN-based MIS-HEMTs achieved by oxygen plasma treatment. 2023 IEEE IMFEDK Tech. Dig. 2023. 2023. 1
Ali Baratov, Takahiro Igarashi, Masaki Ishiguro, Shogo Maeda, Terai Suguru, Masaaki Kuzuhara, Joel T Asubar. Low thermal budget V/Al/Mo/Au ohmic contacts for improved performance of AlGaN/GaN MIS-HEMTs. Japanese Journa of Applied Physics. 2023

書籍 (2件)：

MBE-grown ZnSnAs2 Epitaxial Films: A Ferromagnetic Semiconductor Host Prospect (invited book chapter), “Chalcopyrite: Chemical Composition, Occurrence and Uses”
Nova Science Publishers, Inc., (Hauppauge) New York 2014
Electronics Engineering Reviewer For Today’s ECE Licensure Examination
Padilla Engineering and Review Center Publishing and Tutorial Center 2001

講演・口頭発表等 (186件)：

Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications
(2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2022) 2023)
Improved Performance of Normally-off GaNbased MIS-HEMTs with recessed-gate and ultrathin regrown AlGaN barrier
(2023 Asia-Pacific Workshop on Advanced Semiconductor Devices (AWAD 2023) 2023)
Innovation Technologies for Highly Safe and Energy-efficient GaN Devices (invited talk)
(IEEE R10 Webinar Series - “IEEE R10Talk” 2023)
Quasi-Normally-Off operation via Selective Area Growth in high-K-insulated GaN MIS-HEMTs
(2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2022) 2022)
Effect of High-Temperature Annealed Al2O3 insulator on GaN MIS-HEMTs performance
(2022 IEEE International Meeting for Future of Electron Devices ,Kansai (IMFEDK 2022) 2022)

学歴 (4件)：

2006 - 2009 長岡技術科学大学大学院工学研究科情報・制御工学専攻
2004 - 2006 長岡技術科学大学大学院工学研究科電気電子情報工学専攻
1996 - 1998 Mapua Institute of Technology EE-ECE-CoE Masters in Engineering Major in Electronics
1991 - 1995 Mapua Institute of Technology EE-ECE-CoE BS in Electronics and Communications Engineering

学位 (1件)：

博士(工学) (長岡技術科学大学)

経歴 (4件)：

2019/04 - 現在福井大学電気・電子工学講座准教授
2014/11 - 2019/03 福井大学テニュアトラック推進本部講師
2010/04 - 2014/10 北海道大学量子集積エレクトロニクス研究センター博士研究員
2009/11 - 2010/03 長岡技術科学大学電気系博士研究員

委員歴 (15件)：

2020/04 - 現在 IEEE Electron Devices Society Kansai Chapter Academia Committee Vice Chair
2020 - 現在 The 2021 International Meeting for Future of Electron Devices, Kansai Program Committee Chair
- 現在 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Program Committee Member
- 現在 Japanese Society of Applied Physics Member
- 現在 Institute of Electrical and Electronics Engineer Member

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受賞 (20件)：

2023/09 - Institute of Physics (IOP) Trusted Reviewer Status Award IOP Trusted Reviewer Status Award
2022/04 - Institute of Physics (IOP) Applied Physics Express Outstanding Reviewer Award
2021/12 - American Institute of Physics Most Read Tutorials and Methods from 2021, Journal of Applied Physics Controlling surface/interface states in GaN-based transistors: Surface model, insulated gate, and surface passivation
2021/12 - IEEE Included in the 2021 IEEE Electron Device Letters "Golden List of Reviewers"
2020/11 - IEEE EDS Kansai Chapter The 2020 International Meeting for Future of Electron Devices Kansai (IMFEDK 2020) Improved interface of high-K ZrO2 and AlGaN via ex-situ MOVPE regrowth

2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Student Paper Award Study of Luminescence and Leakage Current of AlGaN/GaN HEMTs biased near off-state breakdown

2019/11 - IEEE EDS Kansai Chapter The 2019 International Meeting for Future of Electron Devices Kansai (IMFEDK 2019) Best Paper Award Impact of SiN capping during Ohmic Annealing on Performance of GaN-based HEMTs

2018/12 - IEEE Electron Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2018 https://eds.ieee.org/images/files/Publications/EDL_Editor_Pictures/edlgoldenlist.pdf

2018/11 - International Workshop on Nitride Semiconductors Threshold voltage hysteresis in GaN-based vertical Trench MOSFETs Threshold Voltage Hysteresis in GaN-based Vertical Trench MOSFETs

2018/06 - 2018 International Meeting for Future of Electron Devices Kansai (IMFEDK 2018) Student Paper Award Improved Current Collapse in AlGaN/GaN MOS-HEMTs with dual Field-Plates

2017/12 - IEEE Electronics Device Letters Journal Included in the IEEE Electronics Device Letters Golden List of Reviewers for 2017 http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=8103431

2017/06 - The 6th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2017) Best Paper Award Enhancement-Mode AlGaN/GaN MOS-HEMTs with Recessed-Gate Structures Exhibiting High Threshold Voltage

2017/06 - 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) 2017 International Meeting for Future of Electron Devices Kansai (IMFEDK 2017) Effect of Reverse Bias Annealing on the Properties of AlGaN/GaN MIS-HEMTs with Recessed-gate Structure

2016/09 - Japan Society of Applied Physics 2016 Japan Society of Applied Physics Outstanding Paper Award Characterization of electronic states at insulator/(Al)GaN interfaces for improved Insulated gate and surface passivation structures of GaN-based transistors

2016/06 - 2016 International Meeting for Future of Electron Devices Kansai (IMFEDK 2016) Student Paper Award Breakdown degradation of AlGaN/GaN HEMTs with multi-finger gate patterns

2015/06 - 2015 International Meeting for Future of Electron Devices Kansai (IMFEDK 2015) Student Paper Award Improved Current Collapse in AlGaN/GaN HEMTs with 3-Dimensional Field Plate Structure

2013/12 - 応用物理学会北海道支部発表奨励賞 AlGaN/GaN HEMT のオフ状態ストレスによる電流変動評価

2008/08 - 応用物理学会北陸信越支部発表奨励賞 Growth and Properties of Mn-doped ZnSnAs2 epitaxial films

2008/01 - 社団法人電気学会東京支部新潟支所優秀論文発表賞 Interpretation of the Temperature Dependence of the Transport Properties of ZnSnAs2 epitaxial films grown by MBE

2006/01 - 社団法人電気学会東京支部新潟支所特別賞 Effect of Zn Incorporation on the properties of GaMnAs diluted magnetic semiconductor

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所属学会 (1件)：

応用物理学会

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