- 2021 - 2023 Honeycomb nitrides layers as playground for Xenes formation
- 2018 - 2020 Heavy group III, IV, and V elements triangular lattice atomic layers on semiconductor surfaces - a new kind of 2D Dirac materials
- 2017 - 2019 Intercalation into graphene/SiC interface as a method to tune graphene properties and promote growth of new 2D materials
- 2017 - 2018 Investigation of structural and electronic properties of group IV elements (Sn, Pb) triangular lattice atomic layers (TLAL) on SiC surface and at graphene/SiC interface.
- 2016 - 2017 Modification of graphene/SiC interface by atom intercalation
- 2016 - 2016 Modification of graphene electronic structure with periodic interface of a substrate
- 2015 - 2016 Graphene/SiC interface engineering by materials intercalation
- 2015 - 2015 Graphene/SiC interface engineering
- 2014 - 2015 One-dimensional Ni silicide and graphene nanostructure formation on vicinal SiC surfaces
- 2013 - 2015 Silicides formation and metal-assisted graphene growth on vicinal SiC
- 2014 - 2014 One-dimensional silicide formation and promotion of graphene nanostructures growth on vicinal SiC surfaces.
- 2012 - 2012 Formation and characterization of graphene nanoribbons on vicinal SiC surfaces
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