研究者
J-GLOBAL ID：202101005910885320   更新日: 2024年01月30日

野崎 幹人

Nozaki Mikito
研究分野 (1件)： 薄膜、表面界面物性
競争的資金等の研究課題 (1件)：
  • 2019 - 2023 積層型酸窒化膜によるGaN MOSデバイスの高耐圧・大電流化と閾値電圧制御の実現
論文 (4件)：
  • Takuma Kobayashi, Kazuki Tomigahara, Mikito Nozaki, Takayoshi Shimura, Heiji Watanabe. Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation. Applied Physics Express. 2023. 17. 1. 011003-011003
  • Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takayoshi Shimura, Heiji Watanabe. Passivation of hole traps in SiO2/GaN metal-oxide-semiconductor devices by high-density magnesium doping. Applied Physics Express. 2023. 16. 10. 105501-105501
  • Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Takayoshi Shimura, Heiji Watanabe. Fixed-charge generation in SiO2/GaN MOS structures by forming gas annealing and its suppression by controlling Ga-oxide interlayer growth. Japanese Journal of Applied Physics. 2022. 61. SC. SC1034-SC1034
  • Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe. Insight into interface electrical properties of metal-oxide-semiconductor structures fabricated on Mg-implanted GaN activated by ultra-high-pressure annealing. Applied Physics Letters. 2022. 120. 8. 082103-082103
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