古田潤

フルタジュン | Furuta Jun

所属機関・部署：
職名：助教

研究分野 (1件)：電子デバイス、電子機器

競争的資金等の研究課題 (5件)：

論文 (46件)：

Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi. Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error Measurements. 2023 International Conference on IC Design and Technology (ICICDT). 2023
Keita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi. SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation. 2023 International Conference on IC Design and Technology (ICICDT). 2023
Kazutoshi Kobayashi, Tomoharu Kishita, Hiroki Nakano, Jun Furuta, Mitsuhiko Igarashi, Shigetaka Kumashiro, Michitarou Yabuuchi, Hironori Sakamoto. Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators. IEEE International Reliability Physics Symposium Proceedings. 2023. 2023-March
Shotaro Sugitani, Ryuichi Nakajima, Keita Yoshida, Jun Furuta, Kazutoshi Kobayashi. Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk process. IEEE International Reliability Physics Symposium Proceedings. 2023. 2023-March
Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean Christophe Eloy, Olivier Montfort, Lionel Jure, et al. Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation. Proceedings - 2023 IEEE 29th International Symposium on On-Line Testing and Robust System Design, IOLTS 2023. 2023

MISC (19件)：

Jun Furuta, Shigehiro Umehara, Kazutoshi Kobayashi. Analysis of Neutron-induced Soft Error Rates on 28nm FD-SOI and 22nm FinFET Latches by the PHITS-TCAD Simulation System. IEEE International Conference on Simulation of Semiconductor Processes and Devices. 2017. 2017-. 185-188
Sho Inamori, Jun Furuta, Kazutoshi Kobayashi. MHz-Switching-Speed Current-Source Gate Driver for SiC Power MOSFETs. European Conference on Power Electronics and Applications. 2017. 2017-January. DS1a.2.1-2.7
Yuki Yamashita, Jun Furuta, Sho Inamori, Kazutoshi Kobayashi. Design of RCD Snubber Considering Wiring Inductance for MHz-Switching of SiC-MOSFET. IEEE Workshop on Control and Modeling for Power Electronics. 2017. O10-2
Takuya Komawaki, Michitarou Yabuuchi, Ryo Kishida, Jun Furuta, Takashi Matsumoto, Kazutoshi Kobayashi. Circuit-level Simulation Methodology for Random Telegraph Noise by Using Verilog-AMS. International Conference on IC Design and Technology. 2017. I2. I2.01-04
Masashi Hifumi, Haruki Maruoka, Shigehiro Umehara, Kodai Yamada, Jun Furuta, Kazutoshi Kobayashi. Influence of Layout Structures to Soft Errors Caused by Higher-energy Particles on 28/65 nm FDSOI Flip-Flops. IEEE International Reliability Physics Symposium. 2017. SE5.1-SE5.4

講演・口頭発表等 (71件)：

SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation
(International Conference on IC Design and Technology 2023)
Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error Measurements
(International Conference on IC Design and Technology 2023)
Total Ionizing Dose Effect by Gamma-ray Irradiation and Recovery Phenomenon by Applying High Gate Bias to Commercial SiC Power MOSFETs
(International Conference on Solid State Devices and Materials 2023)
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22nm FD-SOI Process by Heavy-Ion Irradiation
(IEEE International Symposium on On-Line Testing and Robust System Design 2023)
Ultra Long-term Measurement Results of BTI-induced Aging Degradation on 7-nm Ring Oscillators
(IEEE International Reliability Physics Symposium 2023)

所属学会 (4件)：

応用物理学会 , 電子情報通信学会 , 情報処理学会 , Institute of Electrical and Electronics Engineers

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古田 潤