研究者
J-GLOBAL ID:202201021296436745   更新日: 2024年03月26日

Castellazzi Alberto

Castellazzi Alberto
所属機関・部署:
研究分野 (1件): 電子デバイス、電子機器
研究キーワード (3件): Power electronics ,  Power semiconductor devices ,  Integration
論文 (282件):
  • Yonghwa Lee, Alberto Castellazzi. High-temperature integrated SiC MOSFET bi-directional switch in power-overlay technology. Microelectronics Reliability. 2023. 151
  • Y. Lee, S. Avilès, S. Fukunaga, C. Duchesne, P. Lasserre, A. Castellazzi, T. Funaki. Reliable development of an IMS-based SiC power module. Microelectronics Reliability. 2023. 150
  • Jaedon Kwak, Alberto Castellazzi. Electro-thermal stress minimisation of motor-drive inverter switches by hybrid modulation strategy technique. Microelectronics Reliability. 2023. 150
  • Jaedon Kwak, Alberto Castellazzi. State-of-the-Art 800 V Electric Drive Systems: Inverter-Machine Codesign for Energy Efficiency Optimization. Electronics (Switzerland). 2023. 12. 14
  • Muhammad Mohsin Naveed, Alberto Castellazzi. A Single Phase GaN GITs-Based Bidirectional Multilevel Inverter for High Voltage Grid Tied Photovoltaic Power System. Electric Power Components and Systems. 2023. 51. 8. 769-784
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MISC (2件):
  • Alberto Castellazzi, Andrea Irace. SiC Power Module Design: Performance, Robustness and Reliability. SiC Power Module Design: Performance, Robustness and Reliability. 2021. 1-343
  • Alberto Castellazzi, Andrea Irace. Preface. SiC Power Module Design: Performance, Robustness and Reliability. 2021. xv-xvi
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