Crystal Growth and Characterization of I-III-VI2 Semiconductors
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論文 (317件):
Yuki Ogawa, Ryota Akaike, Jiei Hayama, Kenjiro Uesugi, Kanako Shojiki, Toru Akiyama, Takao Nakamura, Hideto Miyake. Crystal orientation control of a-plane AlN films on r-plane sapphire fabricated by sputtering and high-temperature annealing. Journal of Applied Physics. 2024
Kosuke Inai, Ryota Oshimura, Kunio Himeno, Megumi Fujii, Yuta Onishi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Well Number Dependence of Internal Quantum Efficiency in AlGaN Quantum Wells on Low-Dislocation Sputtered AlN Templates. physica status solidi (b). 2024
Kenjiro Uesugi, Ryota Akaike, Shuhei Ichikawa, Takao Nakamura, Kazunobu Kojima, Masahiko Tsuchiya, Hideto Miyake. 230 nm wavelength range far-UVC LED with low Al-composition differentiation between well and barrier layers of MQWs. Applied Physics Express. 2024
Ryoya Yamada, Ryosuke Kondo, Rintaro Miyake, Toma Nishibayasi, Eri Matsubara, Yoshinori Imoto, Sho Iwayama, Tetsuya Takeuchi, Satoshi Kamiyama, Hideto Miyake, et al. Homoepitaxial Regrowth of AlGaN on AlGaN Templates Prepared via Chemical Mechanical Polishing and Its Application to UV-B Laser Diodes. Physica Status Solidi (A) Applications and Materials Science. 2024
Hideaki Murotani, Kosuke Inai, Kunio Himeno, Kaichi Tani, Hiromasa Hayashi, Satoshi Kurai, Narihito Okada, Kenjiro Uesugi, Hideto Miyake, Yoichi Yamada. Temperature- and Excitation Power Density-Resolved Photoluminescence of AlGaN-Based Multiple Quantum Wells Emitting in the Spectral Range of 220-260 nm. physica status solidi (b). 2024
2023/11 - 応用物理学会 第45回(2023年度)応用物理学会論文賞「応用物理学会優秀論文賞」 AlGaN-based UV-B laser diode with a wavelength of 290 nm on 1 μm periodic concavo-convex pattern AlN on a sapphire substrate
2023/11 - 応用物理学会 第45回(2023年度)応用物理学会論文賞「応用物理学会優秀論文賞」 263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities