Y. Shimura, T. Asano, T. Yamaha, M. Fukuda, W. Takeuchi, O. Nakatsuka, S. Zaima. EXAFS study of local structure contributing to Sn stability in SiyGe1-y-zSnz. Materials Science in Semiconductor Processing. 2016. 00
T. Washizu, S. Ike, Y. Inuzuka, W. Takeuchi, O. Nakatsuka, S. Zaima. Selective epitaxial growth of Ge1-xSnx on Si by using metal organic chemical vapor deposition. Journal of Crystal Growth. 2016. 00
Research and development of GeSn-related thin-film semiconductors for nanoelectronic and optoelectronic applications
(Frontiers in Materials Processing Applications, Research and Technology (FiMPART 2017) 2017)
Development of GeSn and related semiconductor thin films for next generation optoelectronic applications
(2017 Global Conference on Polymer and Composite Materials (PCM 2017) 2017)
Epitaxial growth of n+-Ge1-xSnxlayerswith in situ phosphorus doping using low-temperature metal-organic chemical vapor deposition method
(The 10th International Conference on Silicon Epitaxy and Heterostructures (ICSI-10) 2017)
Electrical Properties of AlON/4H-SiC MOS Capacitor Prepared by Plasma-Assisted Atomic Layer Deposition
(9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017) 2017)
Selective Growth of Ge1-xSnx Epitaxial Layer on Patterned Si Substrate using Metal-organic Chemical Vapor Deposition Method
(9th International Symposium on Advanced Plasma Science and Its Applications for Nitrides Nanomaterials / 10th International Conference on Plasma-Nano Technology and Science (ISPlasma 2016 / IC-PLANTS 2017) 2017)