文献

J-GLOBAL ID：201602299079151400   整理番号：13A0878317

Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors

著者 (6件)： Huang Xiaoming (School of Electronic Sci. and Engineering, Nanjing Univ. Jiangsu Provincial Key Lab. of Advanced Photonic and ...) ,  Wu Chenfei (School of Electronic Sci. and Engineering, Nanjing Univ. Jiangsu Provincial Key Lab. of Advanced Photonic and ...) ,  Lu Hai (School of Electronic Sci. and Engineering, Nanjing Univ. Jiangsu Provincial Key Lab. of Advanced Photonic and ...) ,  Xu Qingyu (Dep. of Physics, Southeast Univ., Nanjing) ,  Zhang Rong (School of Electronic Sci. and Engineering, Nanjing Univ. Jiangsu Provincial Key Lab. of Advanced Photonic and ...) ,  Zheng Youdou (School of Electronic Sci. and Engineering, Nanjing Univ. Jiangsu Provincial Key Lab. of Advanced Photonic and ...)
資料名： Chinese Physics Letters  (Chinese Physics Letters)
巻： 29  号： 6  ページ： 067302-1-067302-4  発行年： 2012年 
JST資料番号： W1191A  ISSN： 0256-307X  資料種別： 逐次刊行物 (A)
発行国： 中国 (CHN)  言語： 英語 (EN)

タイトルに関連する用語 (2件)： ImPACT ,  TRAP