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J-GLOBAL ID：201702226167900828   整理番号：17A0758961

温度安定充填タングステンブロンズ誘電セラミックBa_3 5Sm_1 5Fe_0 0.75Nb_9 25O_30【Powered by NICT】

Temperature-stable unfilled tungsten bronze dielectric ceramics: Ba_3.5Sm_1.5Fe_0.75Nb_9.25O₃₀

著者 (24件)： Hu Changzheng (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Hu Changzheng (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Hu Changzheng (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Hu Changzheng (College of Material Science and Engineering, Guilin University of Technology, Guilin, China) ,  Sun Zhen (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Sun Zhen (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Sun Zhen (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Sun Zhen (College of Material Science and Engineering, Guilin University of Technology, Guilin, China) ,  Zhu Qihua (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Zhu Qihua (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Zhu Qihua (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Zhu Qihua (College of Material Science and Engineering, Guilin University of Technology, Guilin, China) ,  Li Chunchun (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Li Chunchun (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Li Chunchun (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Li Chunchun (College of Material Science and Engineering, Guilin University of Technology, Guilin, China) ,  Liu Laijun (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Liu Laijun (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Liu Laijun (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Liu Laijun (College of Material Science and Engineering, Guilin University of Technology, Guilin, China) ,  Fang Liang (Ministry-Province Jointly-Constructed Cultivation Base for State Key Laboratory of Processing for Non-Ferrous Metal and Featured Materials, Guilin University of Technology, Guilin, China) ,  Fang Liang (Key Laboratory of New Processing Technology for Nonferrous Metals and Materials, Ministry of Education, Guilin, China) ,  Fang Liang (Guangxi Universities Key Laboratory of Non-Ferrous Metal Oxide Electronic Functional Materials and Devices, Guilin, China) ,  Fang Liang (College of Material Science and Engineering, Guilin University of Technology, Guilin, China)
資料名： International Journal of Applied Ceramic Technology  (International Journal of Applied Ceramic Technology)
巻： 14  号： 2  ページ： 269-273  発行年： 2017年 
JST資料番号： W1929A  ISSN： 1546-542X  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： 非充填タングステンブロンズセラミックBa_3 5Sm_1 5Fe_0 0.75Nb_9 0.25O_30を通常の固体反応法により調製した。その構造,微細構造,および誘電特性を調べた。誘電挙動はセラミックは残留分極約1.61μC/cm~2と保磁力~13.91kV/cmを室温で強誘電ことを示した。Ba_3 5Sm_1 5Fe_0 0.75Nb_9 0.25O_30セラミックを 55~Kの温度範囲で172 202~200°C(1MHzで)と高い誘電率(ε_r)を用いた温度安定性を示した。試料の静電容量変化率は15%以下であった。これらの結果は,Ba_3 5Sm_1 5Fe_0 0.75Nb_9 0.25O_30セラミックスは温度安定多層セラミックコンデンサの有望である可能性があることを示した。Copyright 2017 Wiley Publishing Japan K.K. All Rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 保磁力 ,  静電容量 ,  微細構造 ,  *タングステンブロンズ ,  多層 ,  誘電性 ,  誘電率 ,  *セラミック ,  磁器コンデンサ ,  残留分極 ,  固相反応
準シソーラス用語： 温度安定性 ,  温度範囲 , 【Automatic Indexing@JST】

著者キーワード (3件)： 誘電特性 ,  タングステンブロンズ構造 ,  セラミック

分類 (1件)： セラミック・陶磁器の製造  (YC03020V)

タイトルに関連する用語 (2件)： タングステンブロンズ ,  セラミック