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J-GLOBAL ID：201702236384260063   整理番号：17A1122538

グラフェン-シリコンヘテロ接合に基づく効率的な多モード環境センサの設計【Powered by NICT】

Designing an Efficient Multimode Environmental Sensor Based on Graphene-Silicon Heterojunction

著者 (27件)： Shehzad Khurram (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Shi Tianjin (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Shi Tianjin (Hangzhou Hikvision Digital Technology Co., Ltd, Hangzhou, 310052, China) ,  Qadir Akeel (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Wan Xia (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Guo Hongwei (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Ali Ayaz (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Xuan Weipeng (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Xu Hua (State Key Laboratory of Bioelectronics, Southeast University, 210096, Nanjing, China) ,  Gu Zhongze (State Key Laboratory of Bioelectronics, Southeast University, 210096, Nanjing, China) ,  Peng Xinsheng (College of Material Science, Zhejiang University, Hangzhou, 310027, China) ,  Xie Jin (State Key Laboratory of Fluid Power & Mechatronic systems, Zhejiang University, Hangzhou, 310027, China) ,  Sun Litao (SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing, 210096, China) ,  He Qiyuan (Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA) ,  Xu Zhen (MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Zhejiang University, Hangzhou, 310027, China) ,  Gao Chao (MOE Key Laboratory of Macromolecular Synthesis and Functionalization, Zhejiang University, Hangzhou, 310027, China) ,  Rim You-Seung (School of Intelligent Mechatronic Engineering, Sejong University, 209 Neungdong-ro, Gwangjin-gu, Seoul, 05006, Republic of Korea) ,  Dan Yaping (Joint Institute of University of Michigan and Shanghai Jiaotong University, 200240, Shanghai, China) ,  Hasan Tawfique (Cambridge Graphene Centre, University of Cambridge, Cambridge, CB3 0FA, UK) ,  Tan Pingheng (State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China) ,  Li Erping (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Yin Wenyan (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Cheng Zhiyuan (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Yu Bin (College of Nanoscale Science and Engineering, State University of New York, NY, 12203, USA) ,  Xu Yang (Key Laboratory of Micro-Nano Electronics and Smart System of Zhejiang Province, College of Information Science and Electronic Engineering and State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, China) ,  Luo Jikui (Institute of Renewable Energy & Environment Technologies, University of Bolton, Bolton, BL3 5AB, UK) ,  Duan Xiangfeng (Department of Chemistry and Biochemistry, University of California, Los Angeles, CA, 90095, USA)
資料名： Advanced Materials Technologies  (Advanced Materials Technologies)
巻： 2  号： 4  ページ： null  発行年： 2017年 
JST資料番号： W2485A  ISSN： 2365-709X  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： グラフェン/シリコン(Gr/Si)Schottky接合の固有特性の吸着気体分子誘導変化を利用することにより,著者らは,高感度,低電力消費,多モード環境センサを報告した。Gr/Si Schottkyダイオードのアレイを組み合わせた差動増幅器回路により,だけでなく温度係数と湿度センシングを区別なく,太陽光曝露時間をモニターすることができた。このデバイスは,順方向と逆方向バイアスにおける湿度に向けて特に敏感であり,抵抗や容量モードで動作した。この素子の感度は逆バイアス,順方向バイアス,抵抗,容量モード1相対湿度(%RH)17%,45%,26%,および32%に達した。逆モードでは,電力消費は2nWである。センサ応答は高度に選択的で,H_2,O_2,N_2,CO_2を含む大気中に存在する他のガスに対して1%よりも低感度であった。高感度,低消費電力,多重運転モード,高選択性は,屋内と屋外空気条件,プロセスモニタリングなどの工業及び家庭安全性,環境モニタリングのための本センサの応用を約束する。Copyright 2017 Wiley Publishing Japan K.K. All Rights reserved. Translated from English into Japanese by JST.【Powered by NICT】

シソーラス用語： 湿度 ,  *センサ ,  ダイオード ,  *グラフェン ,  太陽光 ,  吸着ガス ,  差動増幅器 ,  *ヘテロ接合 ,  高感度 ,  安全性 ,  相対湿度 ,  *多モード ,  バイアス ,  環境モニタリング ,  電力消費

著者キーワード (4件)： 環境センシング ,  グラフェン ,  インターネットのもの ,  Schottky

分類 (2件)： 半導体のルミネセンス  (BM08092S) ,  半導体集積回路  (NC03162T)

タイトルに関連する用語 (6件)： グラフェン ,  シリコン ,  ヘテロ接合 ,  多モード ,  環境 ,  設計