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J-GLOBAL ID：201802281026356738   整理番号：18A2108677

8.4dBの動的消光比を持つ56Gbauds/sで動作する1.3μm Si-BH電気吸収変調レーザ【JST・京大機械翻訳】

$1.3¥mu¥text{m}$ SI-BH Electro-Absorption Modulated Laser Operating at 56Gbauds/s with 8.4dB Dynamic Extinction Ratio

著者 (20件)： Cerulo G. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Debregeas H. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Lelarge F. (Almae Technologies, Route de Nozay, Marcoussis, 91460, France) ,  Garreau A. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Pommereau F. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Provost J-G. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Lanteti D. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Mekhazni K. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Fortin C. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Dai X. (Almae Technologies, Route de Nozay, Marcoussis, 91460, France) ,  Joshi S. (Almae Technologies, Route de Nozay, Marcoussis, 91460, France) ,  Carrara D. (Almae Technologies, Route de Nozay, Marcoussis, 91460, France) ,  Jorge F. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Blache F. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Mallecot F. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Achouche M. (III-V Lab, Joint laboratory between Nokia Bell Labs, Thales Research and Technology, CEA Leti, Palaiseau, 91767, France) ,  Muller R. Rios (Nokia Bell Labs, Nozay, 91620, France) ,  Simonneau C. (Nokia Bell Labs, Nozay, 91620, France) ,  Charlet G. (Nokia Bell Labs, Nozay, 91620, France) ,  Gentner J-L. (Almae Technologies, Route de Nozay, Marcoussis, 91460, France)
資料名： IEEE Conference Proceedings  (IEEE Conference Proceedings)
巻： 2018  号： ECOC  ページ： 1-3  発行年： 2018年 
JST資料番号： W2441A  資料種別： 会議録 (C)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： 半絶縁埋込み導波路技術に基づいて,56GBaud/s13μmの電気吸収変調レーザを示した。BER=10~3で,1,8dBmのファイバ結合平均パワー,および112Gb/sのPAM4伝送を有する8.4dBの動的消光比を実証した。Copyright 2018 The Institute of Electrical and Electronics Engineers, Inc. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 導波路 ,  *レーザ ,  *消光比

分類 (1件)： 図形・画像処理一般  (JE04010I)

タイトルに関連する用語 (4件)： Si ,  Bh ,  変調 ,  レーザ