田中一

タナカハジメ | Tanaka Hajime

所属機関・部署：
職名：助教

研究分野 (1件)：電気電子材料工学

研究キーワード (3件)：半導体 , キャリア輸送 , シミュレーション

競争的資金等の研究課題 (4件)：

論文 (14件)：

Hajime Tanaka, Nobuya Mori. Analysis of Hall mobility in two-dimensional disordered systems. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2020. 35. 9
Foto Hashimoto, Hajime Tanaka, Nobuya Mori. Material dependence of band-to-band tunneling in van der Waals heterojunctions of transition metal dichalcogenides. Journal of Physics D: Applied Physics. 2020
Hajime Tanaka, Tsunenobu Kimoto, Nobuya Mori. Theoretical analysis of band structure effects on impact ionization coefficients in wide-bandgap semiconductors. APPLIED PHYSICS EXPRESS. 2020. 13. 4
Hajime Tanaka, Nobuya Mori. Modeling of carrier scattering in MOS inversion layers with large density of interface states and simulation of electron Hall mobility in 4H-SiC MOSFETs. Japanese Journal of Applied Physics. 2020. 59. 3. 031006
Takuya Maeda, Xilun Chi, Hajime Tanaka, Masahiro Horita, Jun Suda, Tsunenobu Kimoto. Franz-Keldysh effect in 4H-SiC p-n junction diodes under high electric field along the <11-20> direction. Japanese Journal of Applied Physics. 2019. 58. 9. 091007

MISC (4件)：

講演・口頭発表等 (24件)：

界面準位の影響に着目したSiC MOS反転層における電子輸送の理論的検討
(先進パワー半導体分科会第6回個別討論会 2020)
Effects of inelastic scattering on inter-layer tunneling between vertically stacked semiconductor nanoribbons
(International Symposium on Hybrid Quantum Systems 2019 2019)
NEGF simulation of band-to-band tunneling in TMD heterojunctions
(International Symposium on Hybrid Quantum Systems 2019 2019)
Theoretical Study of Band Structure Effects on Impact Ionization Coefficients in Wide-bandgap Semiconductors
(9th Asia-Pacific Workshop on Widegap Semiconductors 2019)
Monte Carlo Simulation of Hall Mobility in 4H-SiC MOS Inversion Layers
(International Conference on Silicon Carbide and Related Materials (ICSCRM) 2019 2019)

学歴 (2件)：

学位 (1件)：

経歴 (5件)：

委員歴 (1件)：

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田中 一