文献

J-GLOBAL ID：201902118012690290   整理番号：19S2600200

Spectroscopic characterization of low-temperature grown gaas epitaxial films

著者 (10件)： Abe, Hajime (Department of Applied Physics, Osaka Universiry) ,  Nakashima, Shin-Ichi (Department of Applied Physics, Osaka Universiry) ,  Harima, Hiroshi (Department of Applied Physics, Osaka Universiry) ,  Hangyo, Masanori (Research Center for Superconducting Materials and Electronics, Osaka University) ,  Tokuda, Yasunori (Semiconductor Research Laboratory, MITSUBISHI Electric Corporation) ,  Kanamoto, Kyozo (Semiconductor Research Laboratory, MITSUBISHI Electric Corporation) ,  Abe, Yuji (Semiconductor Research Laboratory, MITSUBISHI Electric Corporation) ,  Tsukada, Noriaki (Semiconductor Research Laboratory, MITSUBISHI Electric Corporation) ,  Tani, Masahiko (Communications Research Laboratory, Kansai Advanced Research Center, Iwaoka) ,  Sakai, Kiyomi (Communications Research Laboratory, Kansai Advanced Research Center, Iwaoka)
資料名： Japanese Journal of Applied Physics
巻： 33  号： 9 R  ページ： 4807-4811  発行年： 1994年 
JST資料番号： SCOPUS  ISSN： 0021-4922 
言語： 英語 (EN)

タイトルに関連する用語 (1件)： GaAs