文献

J-GLOBAL ID：201902200850853086   整理番号：19S1388022

Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk

著者 (8件)： Wu, Hao (Department of Applied Physics, Waseda University) ,  Harasawa, Ryo (Department of Applied Physics, Waseda University) ,  Yasue, Yuya (Department of Applied Physics, Waseda University) ,  Aritake, Takanori (Department of Applied Physics, Waseda University) ,  Jiang, Canyu (Department of Applied Physics, Waseda University) ,  Tackeuchi, Atsushi (Department of Applied Physics, Waseda University) ,  Ji, Lian (Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Suzhou Industrial Park) ,  Lu, Shulong (Suzhou Institute of Nano-Tech and Nano-bionics, Chinese Academy of Sciences, Dushu Lake Higher Education Town, Suzhou Industrial Park)
資料名： AIP Advances
巻： 6  号： 8  発行年： 2016年 
JST資料番号： SCOPUS  ISSN： 2158-3226 
発行国： アメリカ (USA)  言語： 英語 (EN)

タイトルに関連する用語 (1件)： SPIN