文献

J-GLOBAL ID：201902208821817772   整理番号：19S1428340

Luminescence properties of Ge-implanted SiO 2 layer on Si substrate for blue-UV light source with low-voltage drive

著者 (8件)： Arai, Nobutoshi (Advanced Technology Research Laboratories, SHARP Corporation) ,  Harada, Masatomi (Advanced Technology Research Laboratories, SHARP Corporation) ,  Kotaki, Hiroshi (Advanced Technology Research Laboratories, SHARP Corporation) ,  Takahashi, Akira (Advanced Technology Research Laboratories, SHARP Corporation) ,  Miyagawa, Go (Department of Electronic Science and Engineering, Kyoto University) ,  Kinoshita, Shohei (Department of Electronic Science and Engineering, Kyoto University) ,  Tsuji, Hiroshi (Department of Electronic Science and Engineering, Kyoto University) ,  Gotoh, Yasuhito (Department of Electronic Science and Engineering, Kyoto University)
資料名： IMFEDK 2012 - 2012 International Meeting for Future of Electron Devices, Kansai
ページ： 40-41  発行年： 2012年 
JST資料番号： SCOPUS  ISBN： 9781467308359 
発行国： アメリカ (USA)  言語： 英語 (EN)

タイトルに関連する用語 (3件)： SiO ,  Si ,  LIGHT