文献

J-GLOBAL ID：201902210662613340   整理番号：19S0589675

Free-charge carrier parameters of n-type, p-type and compensated InN:Mg determined by infrared spectroscopic ellipsometry

著者 (9件)： Schöche, S. (Department of Electrical Engineering, Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln) ,  Hofmann, T. (Department of Electrical Engineering, Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln) ,  Schubert, M. (Department of Electrical Engineering, Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln) ,  Darakchieva, V. (Department of Physics, Chemistry and Biology (IFM), Linköping University) ,  Wang, X. (Graduate School of Electrical and Electronics Engineering, InN-Project As A CREST Program of JST, Chiba University) ,  Yoshikawa, A. (Graduate School of Electrical and Electronics Engineering, InN-Project As A CREST Program of JST, Chiba University) ,  Wang, K. (Research Organization of Science and Engineering, Ritsumeikan University) ,  Araki, T. (Research Organization of Science and Engineering, Ritsumeikan University) ,  Nanishi, Y. (Department of Photonics, Ritsumeikan University)
資料名： Thin Solid Films
巻： 571  号： P3  ページ： 384-388  発行年： 2014年 
JST資料番号： SCOPUS  ISSN： 0040-6090  CODEN： THSFA 
発行国： オランダ (NLD)  言語： 英語 (EN)

タイトルに関連する用語 (2件)： InN ,  Mg