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J-GLOBAL ID：201902215445538430   整理番号：19S0429496

Suppression of plasma-induced damage on GaN etched by a Cl2 plasma at high temperatures

著者 (13件)： Liu, Zecheng (Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University) ,  Pan, Jialin (Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University) ,  Kako, Takashi (Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University) ,  Takeda, Keigo (Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University) ,  Kondo, Hiroki (Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University) ,  Kondo, Hiroki (Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University) ,  Ishikawa, Kenji (Plasma Medical Science Global Innovation Center, Nagoya University) ,  Ishikawa, Kenji (Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University) ,  Hori, Masaru (Plasma Medical Science Global Innovation Center, Nagoya University) ,  Hori, Masaru (Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University) ,  Hori, Masaru (Institute of Innovation for Future Society, Nagoya University) ,  Oda, Osamu (Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University) ,  Sekine, Makoto (Plasma Nanotechnology Research Center, Graduate School of Engineering, Nagoya University)
資料名： Japanese Journal of Applied Physics
巻： 54  号： 6  発行年： 2015年 
JST資料番号： SCOPUS  ISSN： 0021-4922 
発行国： 日本 (JPN)  言語： 英語 (EN)

タイトルに関連する用語 (1件)： GaN