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J-GLOBAL ID：201902217898585156   整理番号：19S1496236

Characteristics of PHEMTs and MSM photodetectors simultaneously fabricated on same epitaxial wafer with In 0.75Ga 0.25As/InGaAs channel layer

著者 (8件)： Koreeda, Yuta (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Endo, Yutaka (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Sato, Kouichi (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Yoshizawa, Kenya (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Nishio, Yui (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Iida, Tsutomu (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Takanashi, Yoshifumi (Department of Materials Science and Technology, Faculty of Industrial Science and Technology, Tokyo University of Science) ,  Taguchi, Hirohisa (Department of Information System Technology, School of Information Science and Technology, Chukyo University 101 Kaizu)
資料名： Physica Status Solidi (C) Current Topics in Solid State Physics
巻： 9  号： 2  ページ： 357-360  発行年： 2012年 
JST資料番号： SCOPUS  ISSN： 1862-6351 
発行国： ドイツ (DEU)  言語： 英語 (EN)

タイトルに関連する用語 (3件)： MSM ,  SAMe ,  InGaAs