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J-GLOBAL ID：201902253154032614   整理番号：19A0514738

MoS_2とWS_2可飽和吸収体を用いた1.65μmの受動QスイッチEr:LuAgレーザ【JST・京大機械翻訳】

Passively Q-Switched Er:LuAG Laser at 1.65 μm Using MoS2 and WS2 Saturable Absorbers

著者 (11件)： Zhang Shuaiyi (Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China) ,  Guo Lei (School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China) ,  Fan Mingqi (School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China) ,  Lou Fei (Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China) ,  Gao Peng (Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China) ,  Lv Hao (Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China) ,  Wang Xia (Shandong Advanced Optoelectronic Materials and Technologies Engineering Laboratory of Qingdao, School of Mathematics and Physics, Qingdao University of Science and Technology, Qingdao, China) ,  Yang Jianlong (SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, China) ,  Li Tao (School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China) ,  Yang Kejian (School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China) ,  Zhao Shengzhi (School of Information Science and Engineering, and Shandong Provincial Key Laboratory of Laser Technology and Application, Shandong University, Jinan, China)
資料名： IEEE Photonics Journal  (IEEE Photonics Journal)
巻： 9  号： 3  ページ： ROMBUNNO.1502707.1-7  発行年： 2017年 
JST資料番号： W2436A  ISSN： 1943-0655  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： 可飽和吸収体としてMoS_2とWS_2を用いて,それぞれ1.65μmの受動QスイッチEr:LuAGレーザ特性を記述した。可飽和吸収体を液相剥離法で調製した。1.1μsの最短パルス幅を,MoS_2可飽和吸収体に対して41.6kHzのパルス繰返し周波数で達成し,4.33Wの最高ピーク出力をもたらした。WS_2可飽和吸収体に対して,パルス繰返し周波数34.2kHz,計算ピーク出力4.13Wで,1.6μsの最小パルスを得た。Copyright 2019 The Institute of Electrical and Electronics Engineers, Inc. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： パルス ,  液相 ,  パルス幅 ,  *レーザ ,  *可飽和吸収体
準シソーラス用語： 繰返し周波数 ,  *受動Qスイッチング , 【Automatic Indexing@JST】

分類 (1件)： 半導体集積回路  (NC03162T)

タイトルに関連する用語 (5件)： 可飽和吸収体 ,  受動Qスイッチ ,  Er ,  LuAG ,  レーザ