徳田雄一郎

トクダユウイチロウ | Tokuda Yuichiro

研究分野 (1件)：無機材料、物性

競争的資金等の研究課題 (2件)：

論文 (23件)：

Norihiro Hoshino, Isaho Kamata, Takahiro Kanda, Yuichiro Tokuda, Hironari Kuno, Hidekazu Tsuchida. Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method. Applied Physics Express. 2020. 13. 9. 095502-095502
Takeshi Okamoto, Takahiro Kanda, Yuichiro Tokuda, Nobuyuki Ohya, Kiyoshi Betsuyaku, Norihiro Hoshino, Isaho Kamata, Hidekazu Tsuchida. Development of 150-mm 4H-SiC Substrates Using a High-Temperature Chemical Vapor Deposition Method. Materials Science Forum. 2020. 1004. 14-19
Yuichiro Tokuda, Norihiro Hoshino, Hironari Kuno, Hideyuki Uehigashi, Takeshi Okamoto, Takahiro Kanda, Nobuyuki Ohya, Isaho Kamata, Hidekazu Tsuchida. Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method. Materials Science Forum. 2020. 1004. 5-13
Yuichiro Tokuda, Hideyuki Uehigashi, Koichi Murata, Hidekazu Tsuchida. Fabrication of 4H-SiC PiN diodes on substrate grown by HTCVD method. JAPANESE JOURNAL OF APPLIED PHYSICS. 2020. 59. SGGD07
Yuichiro Tokuda, Isaho Kamata, Norihiro Hoshino, Hidekazu Tsuchida. Glide of C-core partial dislocations along edges of expanding double-Shockley stacking faults in heavily nitrogen-doped 4H-SiC. JAPANESE JOURNAL OF APPLIED PHYSICS. 2019. 58. 12. 121005

MISC (1件)：

日暮栄治, 徳田雄一郎, 若松嗣治, 赤池正剛, 須賀唯知. 窒化ガリウムとガリウム砒素およびシリコンの常温接合. 応用物理学関係連合講演会講演予稿集. 2007. 54th. 3

講演・口頭発表等 (22件)：

Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Changes in dislocation densities in 4H-SiC bulk crystals obtained by gas source method at a high growth rate
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Analysis of Prismatic Dislocations in 4H-SiC Crystals by Multiple-beam Diffraction Topography
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method
(2019 International Conference on Solid State Devices and Materials 2019)

学歴 (3件)：

学位 (1件)：

受賞 (2件)：

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徳田 雄一郎