Fast 4H-SiC Bulk Growth by High-Temperature Gas Source Method
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Changes in dislocation densities in 4H-SiC bulk crystals obtained by gas source method at a high growth rate
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Development of 150-mm 4H-SiC Substrates using a High-temperature Chemical Vapor Deposition Method
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Analysis of Prismatic Dislocations in 4H-SiC Crystals by Multiple-beam Diffraction Topography
(International Conference on Silicon Carbide and Related Materials 2019 2019)
Fabrication of 4H-SiC PiN Diodes on Substrate Grown by HTCVD Method
(2019 International Conference on Solid State Devices and Materials 2019)
公益社団法人 応用物理学会 第44回(2022年度)応用物理学会論文賞 Reduction in dislocation densities in 4H-SiC bulk crystal grown at high growth rate by high-temperature gas-source method
