文献

J-GLOBAL ID：202002215156762138   整理番号：20A1727868

InGaN発光ダイオードの界面,光学及び電気特性に及ぼす障壁中のH_2処理の影響【JST・京大機械翻訳】

Effect of H₂ treatment in barrier on interface, optical and electrical properties of InGaN light emitting diodes

著者 (31件)： Li Yangfeng (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Li Yangfeng (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Yan Shen (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Yan Shen (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Hu Xiaotao (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Hu Xiaotao (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Song Yimeng (School of Mathematics and Physics, Beijing Key Laboratory for Magneto-Photoelectrical Composite and Interface Science, University of Science and Technology Beijing, Beijing, 100083, China) ,  Deng Zhen (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Deng Zhen (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Deng Zhen (The Yangtze River Delta Physics Research Center, Liyang, 213000, China) ,  Du Chunhua (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Du Chunhua (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Du Chunhua (The Yangtze River Delta Physics Research Center, Liyang, 213000, China) ,  Wang Wenqi (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Wang Wenqi (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Ma Ziguang (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Ma Ziguang (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Wang Lu (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Wang Lu (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Jia Haiqiang (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Jia Haiqiang (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Jia Haiqiang (Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China) ,  Wang Wenxin (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Wang Wenxin (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Zhou Junming (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Zhou Junming (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Jiang Yang (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Jiang Yang (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Chen Hong (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China) ,  Chen Hong (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China) ,  Chen Hong (Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China)
資料名： Superlattices and Microstructures  (Superlattices and Microstructures)
巻： 145  ページ： Null  発行年： 2020年 
JST資料番号： D0600B  ISSN： 0749-6036  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： オランダ (NLD)  言語： 英語 (EN)

抄録/ポイント： 本研究では,障壁成長中の異なるH_2フロー処理によるInGaN発光ダイオード(LED)の界面,光学的および電気的特性を調べた。H_2処理によって,量子井戸と障壁の間の界面は粗くなり,光ルミネセンス強度は減少する。600sccm(2.7%)H_2処理によるLEDの外部量子効率は,サンプルの中で最良の性能を有した。H_2で処理した場合,試料の前方および逆漏れ電流の両方が著しく減少した。サンプルの中で,600sccm(2.7%)のH_2流れが最良の性能を示した。Copyright 2020 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： *発光ダイオード ,  *界面 ,  光ルミネセンス ,  電気的性質 ,  漏れ電流 ,  *電気特性 ,  量子井戸
準シソーラス用語： *InGaN ,  外部量子効率 , 【Automatic Indexing@JST】

著者キーワード (5件)： 水素 ,  InGaN ,  XRD ,  EQE ,  漏れ電流

分類 (5件)： 半導体薄膜  (BK14040E) ,  半導体のルミネセンス  (BM08092S) ,  発光素子  (NC03082G) ,  13-15族化合物を含む半導体-半導体接合  (BM03082Y) ,  界面の電気的性質一般  (BM03081H)

タイトルに関連する用語 (6件)： InGaN ,  発光ダイオード ,  界面 ,  光学 ,  電気特性 ,  障壁