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J-GLOBAL ID：202102275079056179   整理番号：21A0589906

InGaAs/AlGaAs多重量子井戸におけるエレクトロルミネセンス研究【JST・京大機械翻訳】

Electro-photoluminescence study in InGaAs/AlGaAs multi-quantum-wells

著者 (29件)： Han Lili (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Han Lili (University of Chinese Academy of Sciences - Beijing 100049, China) ,  Han Lili (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Zhao Minglong (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Zhao Minglong (University of Chinese Academy of Sciences - Beijing 100049, China) ,  Zhao Minglong (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Tang Xiansheng (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Tang Xiansheng (University of Chinese Academy of Sciences - Beijing 100049, China) ,  Tang Xiansheng (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Huo Wenxue (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Huo Wenxue (University of Chinese Academy of Sciences - Beijing 100049, China) ,  Huo Wenxue (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Deng Zhen (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Deng Zhen (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Deng Zhen (The Yangtze River Delta Physics Research Center - Liyang, Jiangsu 213000, China) ,  Jiang Yang (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Jiang Yang (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Wang Wenxin (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Wang Wenxin (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Wang Wenxin (Songshan Lake Materials Laboratory - Dongguan, Guangdong 523808, China) ,  Chen Hong (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Chen Hong (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Chen Hong (Songshan Lake Materials Laboratory - Dongguan, Guangdong 523808, China) ,  Du Chunhua (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Du Chunhua (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Du Chunhua (The Yangtze River Delta Physics Research Center - Liyang, Jiangsu 213000, China) ,  Jia Haiqiang (Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences Beijing 100190, China) ,  Jia Haiqiang (Center of Materials and Optoelectronics Engineering, University of Chinese Academy of Sciences Beijing 100049, China) ,  Jia Haiqiang (Songshan Lake Materials Laboratory - Dongguan, Guangdong 523808, China)
資料名： EPL  (EPL)
巻： 132  号： 2  ページ： 24004 (4pp)  発行年： 2020年 
JST資料番号： D0701B  ISSN： 0295-5075  資料種別： 逐次刊行物 (A)
記事区分： 短報  発行国： イギリス (GBR)  言語： 英語 (EN)

抄録/ポイント： 光ルミネセンス(PL)は,マルチ量子井戸(MQW)構造のルミネセンス特性の研究において重要な役割を果たす。本研究では,開回路,短絡回路,および順方向電圧条件下でのInGaAs/AlGaAs MQWのエレクトロルミネセンススペクトルを研究した。本論文では,励起パワーに対する光電流と光電圧の依存性を考察し,InGaAs/AlGaAs MQW LEDにおけるキャリア挙動を深く調べることができた。InGaAs/AlGaAs MQW LEDにおける非放射再結合(NRA)効率だけでなく,内部量子効率(IQE)のPLキャラクタリゼーションと計算のために,開回路(OC)条件における光起電力効果を適切に考慮すべきであることを提案した。Please refer to the publisher for the copyright holders. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： *エレクトロルミネセンス ,  光電流 ,  電圧 ,  光ルミネセンス ,  *ルミネセンス ,  励起 ,  スペクトル ,  開路 ,  光起電力効果 ,  *量子井戸 ,  *ヒ化ガリウムインジウム ,  *ヒ化ガリウムアルミニウム ,  *多重量子井戸
準シソーラス用語： 内部量子効率 ,  非放射再結合 , 【Automatic Indexing@JST】

分類 (3件)： 太陽電池  (NC03084O) ,  半導体のルミネセンス  (BM08092S) ,  半導体薄膜  (BK14040E)

タイトルに関連する用語 (5件)： InGaAs ,  AlGaAs ,  多重量子井戸 ,  エレクトロルミネセンス ,  研究