Kansuke Hamasaki, Kazuki Ohnishi, Shugo Nitta, Naoki Fujimoto, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Sn-doped n-type GaN layer with high electron density of 1020 cm-3 grown by halide vapor phase epitaxy. Journal of Crystal Growth. 2024. 628. 127529-127529
Hirotaka Watanabe, Shugo Nitta, Yuto Ando, Kazuki Ohnishi, Yoshio Honda, Hiroshi Amano. Impacts of off-angle and off-direction on surface morphology of GaN grown by metalorganic vapor phase epitaxy on (0001) GaN substrate. Journal of Crystal Growth. 2024. 628. 127552-127552
Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Shun Lu, Manato Deki, Yoshio Honda, Hiroshi Amano. Tuning the p-type doping of GaN over three orders of magnitude via efficient Mg doping during halide vapor phase epitaxy. Journal of Applied Physics. 2022
Kazuki Ohnishi, Naoki Fujimoto, Shugo Nitta, Hirotaka Watanabe, Yoshio Honda, Hiroshi Amano. Surface kinetics in halide vapor phase epitaxial growth of GaN layers on GaN (0001) freestanding substrates. Journal of Crystal Growth. 2022. 592. 126749-126749
Recent Progress of Halide Vapor Phase Epitaxy for GaN Vertical Power Devices
(The 9th Asian Conference on Crystal Growth and Crystal Technology (CGCT-9) 2024)
Effects of growth pressure on TMGa decomposition and carbon incorporation in GaN MOVPE
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)
Lateral p-type GaN Schottky barrier diode using annealed Mg ohmic contact layer on low-Mg-concentration p-GaN
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)
Thermodynamic analysis for halide vapor phase epitaxy of Sn-doped n-type GaN
(14th International Conference on Nitride Semiconductors 2023 (ICNS-14) 2023)