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J-GLOBAL ID：202202212168681274   整理番号：22A0463463

AlN膜のエピタキシャル成長のためのグラフェンしわアレイの移動可能作製【JST・京大機械翻訳】

Transfer-Enabled Fabrication of Graphene Wrinkle Arrays for Epitaxial Growth of AlN Films

著者 (48件)： Song Yuqing (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Song Yuqing (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Gao Yaqi (Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences, Beijing, 100049, P. R. China) ,  Gao Yaqi (Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences, Beijing, 100083, P. R. China) ,  Liu Xiaoting (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Liu Xiaoting (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Liu Xiaoting (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Ma Jing (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Chen Buhang (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Xie Qin (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Xie Qin (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Gao Xin (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Gao Xin (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Gao Xin (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Zheng Liming (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Zheng Liming (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Zhang Yan (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Ding Qingjie (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Jia Kaicheng (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Jia Kaicheng (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Sun Luzhao (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Wang Wendong (Department of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK) ,  Liu Zhetong (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Liu Zhetong (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Liu Zhetong (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Liu Zhetong (Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China) ,  Liu Zhetong (Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China) ,  Liu Zhetong (Beijing National Laboratory for Molecular Sciences, Beijing, 100871, P. R. China) ,  Liu Bingyao (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Liu Bingyao (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Liu Bingyao (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Liu Bingyao (Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China) ,  Liu Bingyao (Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China) ,  Liu Bingyao (Beijing National Laboratory for Molecular Sciences, Beijing, 100871, P. R. China) ,  Gao Peng (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Gao Peng (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Gao Peng (Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China) ,  Gao Peng (Electron Microscopy Laboratory and International Center for Quantum Materials, School of Physics, Peking University, Beijing, 100871, P. R. China) ,  Gao Peng (Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China) ,  Gao Peng (Beijing National Laboratory for Molecular Sciences, Beijing, 100871, P. R. China) ,  Peng Hailin (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Peng Hailin (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China) ,  Wei Tongbo (Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences, Beijing, 100049, P. R. China) ,  Wei Tongbo (Research and Development Center for Semiconductor Lighting Technology Institute of Semiconductors Chinese Academy of Sciences, Beijing, 100083, P. R. China) ,  Lin Li (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Lin Li (Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore) ,  Liu Zhongfan (Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China) ,  Liu Zhongfan (Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China)
資料名： Advanced Materials  (Advanced Materials)
巻： 34  号： 1  ページ： e2105851  発行年： 2022年 
JST資料番号： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： ドイツ (DEU)  言語： 英語 (EN)

抄録/ポイント： グラフェン皺アレイの形成はグラフェンの電気的性質と化学反応性を周期的に変化させ,多くの応用に有望である。しかし,グラフェン皺アレイの大面積作製は,高密度で明確な配向,特に剛体基板上では達成できないままである。ここでは,移動関連グラフェン皺の形成メカニズムの理解に依存して,グラフェン皺アレイを全グラフェン膜の結晶配向を変えることなく作製した。グラフェンの波形表面に乏しい濡れ性を持つ移動媒体の選択は皺の形成の鍵であることが証明された。本研究は,移動関連グラフェン皺の形成過程の深い理解を提供し,AlNエピ層および深紫外発光ダイオードの直接成長を含む,潜在的用途のためのグラフェンの表面特性を周期的に修正するための新しい方法を開く。Copyright 2022 Wiley Publishing Japan K.K. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 発光ダイオード ,  剛体 ,  濡れ ,  電気的性質 ,  結晶方位 ,  表面性状 ,  運動媒質 ,  化学蒸着 ,  *窒化アルミニウム ,  *グラフェン
準シソーラス用語： 高密度 ,  大面積 ,  深紫外発光ダイオード ,  エピタキシャル層 , 【Automatic Indexing@JST】

著者キーワード (6件)： AlN ,  化学蒸着 ,  発光ダイオード ,  ステップバンチ ,  輸送 ,  しわ

分類 (3件)： 固-気界面一般  (CB12041H) ,  固体の表面構造一般  (BK15010E) ,  無機化合物一般及び元素  (CD01010D)

タイトルに関連する用語 (6件)： AlN ,  エピタキシャル成長 ,  グラフェン ,  しわ ,  アレイ ,  作製