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J-GLOBAL ID：202202244967562598   整理番号：22A1114342

化学蒸着による二層WS_2の制御可能な成長および光検出器への応用【JST・京大機械翻訳】

Controllable growth of bilayer WS₂ by chemical vapor deposition and application for photodetectors

著者 (26件)： Zhao Sunwen (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Zhao Sunwen (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Zhang Yanhui (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Zhang Yanhui (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Wang Shuang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Wang Shuang (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Zhao Dongyang (Department of Electronic Science, East China Normal University, Shanghai 200241, China) ,  Zhao Dongyang (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) ,  Kang He (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Kang He (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Li Jing (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Li Jing (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Xiao Runhan (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Xiao Runhan (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Kong Ziqiang (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Kong Ziqiang (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Chen Zhiying (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Chen Zhiying (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Sui Yanping (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Sui Yanping (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China) ,  Wang Jianlu (Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China) ,  Wang Jianlu (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) ,  Chen Yan (Department of Electronic Science, East China Normal University, Shanghai 200241, China) ,  Chen Yan (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China) ,  Yu Guanghui (State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China) ,  Yu Guanghui (Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China)
資料名： Materials Letters  (Materials Letters)
巻： 317  ページ： Null  発行年： 2022年 
JST資料番号： E0935A  ISSN： 0167-577X  資料種別： 逐次刊行物 (A)
記事区分： 短報  発行国： オランダ (NLD)  言語： 英語 (EN)

抄録/ポイント： WS_2は次世代集積回路応用における有望な材料であり,その電気的および光電子特性は層数に依存する。ここでは,化学蒸着(CVD)によるWS_2二分子層の簡単でスケーラブルな合成を,硫黄導入の時間を細かく制御することによって実証した。成長したままの二層WS_2の光学的および微細構造的キャラクタリゼーションは均一な単結晶質を示した。二重層WS_2に基づく光検出器は比較的良好な性能を示した。Copyright 2022 Elsevier B.V., Amsterdam. All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 結晶成長 ,  *光検出器 ,  微細構造 ,  二分子層 ,  応用回路 ,  硫黄 ,  多層膜 ,  光学材料 ,  *化学蒸着 ,  キャラクタリゼーション ,  光電子
準シソーラス用語： 二重層 ,  二層 , 【Automatic Indexing@JST】

著者キーワード (3件)： 化学蒸着 ,  結晶成長 ,  光学材料と特性

分類 (2件)： その他の無機化合物の薄膜  (BK14060A) ,  測光と光検出器一般  (BD07031F)

タイトルに関連する用語 (5件)： 化学蒸着 ,  二層 ,  成長 ,  光検出器 ,  応用