文献

J-GLOBAL ID：202202275671678606   整理番号：22A0985154

[数式:原文を参照]における強誘電的分極とDirac様表面状態の共存【JST・京大機械翻訳】

Coexistence of Ferroelectriclike Polarization and Dirac-like Surface State in [Formula : see text]

著者 (25件)： Li Yunlong (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Ran Zhao (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Huang Chaozhi (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Wang Guanyong (Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China) ,  Shen Peiyue (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Huang Haili (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Xu Chunqiang (School of Physics and Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 211189, China) ,  Liu Yi (Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China) ,  Jiao Wenhe (Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China) ,  Jiang Wenxiang (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Hu Jiayuan (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Zhu Gucheng (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Xu Chenhang (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Lu Qi (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Wang Guohua (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Jing Qiang (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Wang Shiyong (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Shi Zhiwen (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Jia Jinfeng (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Jia Jinfeng (Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Xu Xiaofeng (Key Laboratory of Quantum Precision Measurement of Zhejiang Province, Department of Applied Physics, Zhejiang University of Technology, Hangzhou 310023, China) ,  Zhang Wentao (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Luo Weidong (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Qian Dong (Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China) ,  Qian Dong (Tsung-Dao Lee Institute, Shanghai Jiao Tong University, Shanghai 200240, China)
資料名： Physical Review Letters  (Physical Review Letters)
巻： 128  号： 10  ページ： 106802  発行年： 2022年 
JST資料番号： H0070A  ISSN： 0031-9007  CODEN： PRLTAO  資料種別： 逐次刊行物 (A)
記事区分： 原著論文  発行国： アメリカ合衆国 (USA)  言語： 英語 (EN)

抄録/ポイント： 角度分解光電子放出分光法,走査トンネル顕微鏡,原子間力顕微鏡に基づく圧電応答力顕微鏡および第一原理計算を組み合わせて,トポロジー半金属候補[数式:原文を参照]の表面上の低エネルギーバンド構造,原子構造,および電荷分極を研究した。Dirac様表面状態を,角度分解光電子放出分光法による(010)表面上で観察し,第一原理計算と一致した。一方,圧電応答力顕微鏡は,同じ表面上でスイッチング可能な強誘電性様分極を明らかにした。走査トンネル顕微鏡で観察した非中心対称性表面緩和が,この新規材料における観察された強誘電性様状態の起源であることを提案した。著者らの知見は,強誘電体様表面電荷分布と新しい表面状態の共存を有する新しいプラットフォームを提供する。Copyright 2022 The American Physical Society All rights reserved. Translated from English into Japanese by JST.【JST・京大機械翻訳】

シソーラス用語： 位相幾何学 ,  光電子放出 ,  強誘電体 ,  バンド構造 ,  電荷 ,  *分極 ,  強誘電性 ,  電荷分布 ,  スペクトロスコピー ,  半金属 ,  走査型トンネル顕微鏡 ,  原子間力顕微鏡
準シソーラス用語： 圧電応答力顕微鏡 ,  第一原理計算 ,  非中心対称性 , 【Automatic Indexing@JST】

分類 (1件)： 表面の電子構造  (BM02080J)

タイトルに関連する用語 (4件)： 数式 ,  参照 ,  分極 ,  共存