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CHANG WEN HSIN

論文 (18件)：

Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Naoya Okada, Takahiko Endo, Yasumitsu Miyata, Toshifumi Irisawa. Thermally stable Bi2Te3/WSe2 Van Der Waals contacts for pMOSFETs application. Scientific Reports. 2024. 14. 1
Naoya Okada, Wen Hsin Chang, Shogo Hatayama, Yuta Saito, Toshifumi Irisawa. Electrical properties and band alignments of Sb2Te3/Si heterojunctions, low-barrier Sb2Te3/n-Si and high-barrier Sb2Te3/p-Si junctions. Applied Physics Express. 2024
Mitsuhiro Okada, Yuki Okigawa, Takeshi Fujii, Takahiko Endo, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Yasumitsu Miyata, Tetsuo Shimizu, Toshitaka Kubo, et al. Characterization of band alignment at a metal-MoS2 interface by Kelvin probe force microscopy. Japanese Journal of Applied Physics. 2024
Yuta Saito, Shogo Hatayama, Wen Hsin Chang, Naoya Okada, Toshifumi Irisawa, Fumihiko Uesugi, Masaki Takeguchi, Yuji Sutou, Paul Fons. Discovery of a metastable van der Waals semiconductor via polymorphic crystallization of an amorphous film. Materials Horizons. 2023. 10. 6. 2254-2261
Mitsuhiro Okada, Jiang Pu, Yung-Chang Lin, Takahiko Endo, Naoya Okada, Wen-Hsin Chang, Anh Khoa Augustin Lu, Takeshi Nakanishi, Tetsuo Shimizu, Toshitaka Kubo, et al. Large-Scale 1T′-Phase Tungsten Disulfide Atomic Layers Grown by Gas-Source Chemical Vapor Deposition. ACS Nano. 2022

MISC (1件)：

CHANG W. H., 畑山祥吾, 齊藤雄太, 岡田直也, 遠藤尚彦, 宮田耕充, 入沢寿史. Sb₂Te₃層状膜によるMoS₂上低抵抗コンタクトの実現. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2023. 84th

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