田岡紀之

Taoka Noriyuki

競争的資金等の研究課題 (3件)：

論文 (178件)：

Yuki Imai, Ryoya Tsuji, Katsunori Makihara, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki. Alignment control of self-assembling Si quantum dots. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING. 2023. 162
Keigo Matsushita, Akio Ohta, Shigehisa Shibayama, Tomoharu Tokunaga, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Layer transfer of ultrathin Ge crystal segregated on Al/Ge(111) structure. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SG
Katsunori Makihara, Yuji Yamamoto, Yuki Imai, Noriyuki Taoka, Markus Andreas Schubert, Bernd Tillack, Seiichi Miyazaki. Room Temperature Light Emission from Superatom-like Ge-Core/Si-Shell Quantum Dots. NANOMATERIALS. 2023. 13. 9
Shunsuke Nishimura, Noriyuki Taoka, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki. Formation of ultra-thin NiGe film with single crystalline phase and smooth surface. JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC
Taiki Sakai, Akio Ohta, Keigo Matsushita, Noriyuki Taoka, Katsunori Makihara, Seiichi Miyazaki. Evaluation of chemical structure and Si segregation of Al/Si(111). JAPANESE JOURNAL OF APPLIED PHYSICS. 2023. 62. SC

MISC (8件)：

T. Asano, T. Terashima, T. Yamaha, M. Kurosawa, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima. Epitaxial growth and crystalline properties of Ge1-x-ySi xSny layers on Ge(001) substrates. 2014 7th International Silicon-Germanium Technology and Device Meeting, ISTDM 2014. 2014. 159-160
Kusumandari, Noriyuki Taoka, Wakana Takeuchi, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima. Defects induced by reactive ion etching in Ge substrate. Advanced Materials Research. 2014. 896. 241-244
M. Nakamura, Y. Shimura, W. Takeuchi, N. Taoka, O. Nakatsuka, S. Zaima. Optical properties of Ge 1-xSn x epitaxial layers with very high Sn contents. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 98-99
Kimihiko Kato, Mitsuo Sakashita, Wakana Takeuchi, Noriyuki Taoka, Osamu Nakatsuka, Shigeaki Zaima. Effect of gate metal electrode on chemical bonding state in metal/Pr-oxide/Ge gate stack structure. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 68-69
Osamu Nakatsuka, Yosuke Shimura, Wakana Takeuchi, Noriyuki Taoka, Shigeaki Zaima. Material properties and applications of Ge 1-xSn x alloys for Ge nanoelectronics. 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. 116-117

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田岡 紀之