文献
J-GLOBAL ID:200902194346073960
整理番号:93A0423323
Growth of large SiC single crystals.
著者 (7件):
BARRETT D L
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
MCHUGH J P
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
HOBGOOD H M
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
HOPKINS R H
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
MCMULLIN P G
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
CLARKE R C
(Westinghouse Science and Technology Center, Pennsylvania, USA)
,
CHOYKE W J
(Univ. Pittsburgh, Pennsylvania, USA)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
128
号:
1/4 Pt 1
ページ:
358-362
発行年:
1993年03月
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
発行国:
オランダ (NLD)
言語:
英語 (EN)