文献
J-GLOBAL ID:200902209318981084
整理番号:06A0216437
酸化アルミニウムのゲート絶縁体を持つダイヤモンドを基本とする金属-絶縁体-半導体電界効果トランジスターの特性評価
Characterization of diamond metal-insulator-semiconductor field-effect transistors with aluminum oxide gate insulator
著者 (9件):
HIRAMA Kazuyuki
(School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
,
MIYAMOTO Shingo
(School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
,
MATSUDAIRA Hiroki
(School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
,
YAMADA Keisaku
(School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
,
KAWARADA Hiroshi
(School of Sci. and Engineering, Waseda Univ., 3-4-1 Okubo, Shinjuku-ku, Tokyo 169-8555, JPN)
,
CHIKYO Toyohiro
(Advanced Materials Laboratories, National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan and ...)
,
KOINUMA Hideomi
(Advanced Materials Laboratories, National Inst. for Materials Sci., 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan and ...)
,
HASEGAWA Ken
(Materials and Structures Lab., Tokyo Inst. of Technol., 4259 Nagatsuta, Midori, Yokohama 226-8503, JPN)
,
UMEZAWA Hitoshi
(Diamond Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
88
号:
11
ページ:
112117-112117-3
発行年:
2006年03月13日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)