文献
J-GLOBAL ID:200902211813882640
整理番号:07A1056327
二段階大気圧プラズマ増強蒸着-酸化過程を用いたSiO2層の低温形成
Low-temperature formation of SiO2 layers using a two-step atmospheric pressure plasma-enhanced deposition-oxidation process
著者 (5件):
KAKIUCHI Hiroaki
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
,
OHMI Hiromasa
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
,
HARADA Makoto
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
,
WATANABE Heiji
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
,
YASUTAKE Kiyoshi
(Dep. of Precision Sci. and Technol., Graduate School of Engineering, Osaka Univ., 2-1 Yamada-oka, Suita, Osaka ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
91
号:
16
ページ:
161908-161908-3
発行年:
2007年10月15日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)