文献
J-GLOBAL ID:200902238446241751
整理番号:04A0189590
高信頼度多孔質low-κ/Cu集積用の低圧CMP
Low-Pressure CMP for Reliable Porous Low-k/Cu Integration
著者 (9件):
KONDO S
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
TOKITOH S
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
YOON B U
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
NAMIKI A
(Novellus Systems Japan, Inc., Kanagawa-ken, JPN)
,
SONE A
(Novellus Systems Japan, Inc., Kanagawa-ken, JPN)
,
OHASHI N
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
MISAWA K
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
SONE S
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
,
KOBAYASHI N
(Semiconductor Leading Edge Technol., Inc.(Selete), Ibaraki-ken, JPN)
資料名:
Proceedings of the IEEE 2003 International Interconnect Technology Conference
(Proceedings of the IEEE 2003 International Interconnect Technology Conference)
ページ:
86-88
発行年:
2003年
JST資料番号:
K20030147
ISBN:
0-7803-7797-4
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)