文献
J-GLOBAL ID:200902265885500337
整理番号:08A0340924
ナノ結晶シリコン平面陰極の放出効率の改善
Improvement of emission efficiency of nanocrystalline silicon planar cathodes
著者 (6件):
SHIMAWAKI Hidetaka
(Dep. of System and Information Engineering, Fac. of Engineering, Hachinohe Inst. of Technol., Hachinohe 031-8501, JPN)
,
NEO Yochiro
(Res. Inst. of Electronics, Shizuoka Univ., Hamamatsu 432-8011, JPN)
,
MIMURA Hidenori
(Res. Inst. of Electronics, Shizuoka Univ., Hamamatsu 432-8011, JPN)
,
MURAKAMI Katsuhisa
(Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN)
,
WAKAYA Fujio
(Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN)
,
TAKAI Mikio
(Center for Quantum Sci. and Technol. under Extreme Conditions, Osaka Univ., Osaka 560-8531, JPN)
資料名:
Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures
(Journal of Vacuum Science & Technology. B. Microelectronics and Nanometer Structures)
巻:
26
号:
2
ページ:
864
発行年:
2008年03月
JST資料番号:
E0974A
ISSN:
1071-1023
CODEN:
JVTBD9
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)