文献
J-GLOBAL ID:200902280470390993
整理番号:09A0356846
分子線エピタクシーによって成長させたAlN薄膜の作製と急速熱アニーリング
Preparation and rapid thermal annealing of AlN thin films grown by molecular beam epitaxy
著者 (8件):
LIU B.
(Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN)
,
LIU B.
(School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN)
,
GAO J.
(Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN)
,
GAO J.
(School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN)
,
WU K.m.
(Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN)
,
WU K.m.
(School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN)
,
LIU C.
(Key Lab. of Acoustic and Photonic Materials and Devices of Ministry of Education, Wuhan Univ., Wuhan 430072, CHN)
,
LIU C.
(School of Physics and Technol., Wuhan Univ., Wuhan 430072, CHN)
資料名:
Solid State Communications
(Solid State Communications)
巻:
149
号:
17-18
ページ:
715-717
発行年:
2009年05月
JST資料番号:
H0499A
ISSN:
0038-1098
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
イギリス (GBR)
言語:
英語 (EN)