文献
J-GLOBAL ID:200902282836030939
整理番号:06A0630702
単一エネルギーの陽電子ビームを用いて調べた,HfSiON系金属-酸化物-半導体のゲート電極として使われる多結晶Si中の空孔-不純物複合体
Vacancy-impurity complexes in polycrystalline Si used as gate electrodes of HfSiON-based metal-oxide-semiconductors probed using monoenergetic positron beams
著者 (10件):
UEDONO A.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
IKEUCHI K.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
OTSUKA T.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
YAMABE K.
(Inst. of Applied Physics, Univ. of Tsukuba, Tsukuba, Ibaraki 305-8573, JPN)
,
EGUCHI K.
(Semiconductor Technol. Academic Res. Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, JPN)
,
TAKAYANAGI M.
(Semiconductor Technol. Academic Res. Center, 17-2, Shin Yokohama 3-chome, Kohoku, Yokohama 222-0033, JPN)
,
ISHIBASHI S.
(Res. Inst. for Computational Sciences (RICS), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...)
,
OHDAIRA T.
(Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...)
,
MURAMATSU M.
(Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...)
,
SUZUKI R.
(Res. Inst. of Instrumentation Frontier (RIIF), National Inst. of Advanced Industrial Sci. and Technol. (AIST), 1-1-1 ...)
資料名:
Journal of Applied Physics
(Journal of Applied Physics)
巻:
100
号:
3
ページ:
034509-034509-6
発行年:
2006年08月01日
JST資料番号:
C0266A
ISSN:
0021-8979
CODEN:
JAPIAU
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)