文献
J-GLOBAL ID:200902297657565444
整理番号:08A0938773
グラフェンのNi表面上偏析と絶縁体への転写
Graphene segregated on Ni surfaces and transferred to insulators
著者 (6件):
YU Qingkai
(Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA)
,
LIAN Jie
(Dep. of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Inst., Troy, New York 12180, USA)
,
SIRIPONGLERT Sujitra
(Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA)
,
LI Hao
(Dep. of Mechanical and Aerospace Engineering, Univ. of Missouri, Columbia, Missouri 65211, USA)
,
CHEN Yong P.
(Dep. of Physics and Birck Nanotechnology Center, Purdue Univ., West Lafayette, Indiana 47907, USA)
,
PEI Shin-shem
(Center for Advanced Materials, Dep. of Electrical and Computer Engineering, Univ. of Houston, Houston, Texas 77204, USA)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
93
号:
11
ページ:
113103
発行年:
2008年09月15日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)