文献
J-GLOBAL ID:200902298672533504
整理番号:08A0428977
TiO2抵抗性スイッチングメモリアレイ用のPt/(In,Sn)2O3/TiO2 Schottky型ダイオードスイッチ
(In,Sn)2O3/TiO2/Pt Schottky-type diode switch for the TiO2 resistive switching memory array
著者 (9件):
SHIN Yong Cheol
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
SONG Jaewon
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
KIM Kyung Min
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
CHOI Byung Joon
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
CHOI Seol
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
LEE Hyun Ju
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
KIM Gun Hwan
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
EOM Taeyong
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
,
HWANG Cheol Seong
(Dep. of Materials Sci. and Engineering and Inter-University Semiconductor Res. Center, Seoul National Univ., Seoul ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
92
号:
16
ページ:
162904
発行年:
2008年04月21日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)