文献
J-GLOBAL ID:201002245062121055
整理番号:10A0201211
低温でのUV励起オゾン酸化におけるケイ素基質の最表面温度の評価
Evaluation of Outermost Surface Temperature of Silicon Substrates during UV-Excited Ozone Oxidation at Low Temperature
著者 (10件):
KAMEDA Naoto
(Meidensha Corp.)
,
KAMEDA Naoto
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
,
NISHIGUCHI Tetsuya
(Meidensha Corp.)
,
NISHIGUCHI Tetsuya
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
,
MORIKAWA Yoshiki
(Meidensha Corp.)
,
KEKURA Mitsuru
(Meidensha Corp.)
,
NAKAMURA Ken
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
,
USHIYAMA Tomoharu
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
,
NONAKA Hidehiko
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
,
ICHIMURA Shingo
(National Inst. of Advanced Industrial Sci. and Technol. (AIST))
資料名:
Analytical Sciences
(Analytical Sciences)
巻:
26
号:
2
ページ:
273-276 (J-STAGE)
発行年:
2010年
JST資料番号:
G0673B
ISSN:
0910-6340
CODEN:
ANSCEN
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
日本 (JPN)
言語:
英語 (EN)