文献
J-GLOBAL ID:201002296626322068
整理番号:10A0904521
InSbメルトへのGaSbの溶解過程のX線侵入法によるその場観察
In-situ observations of dissolution process of GaSb into InSb melt by X-ray penetration method
著者 (10件):
RAJESH G.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
ARIVANANDHAN M.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
MORII H.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
AOKI T.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
KOYAMA T.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
MOMOSE Y.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
TANAKA A.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
,
OZAWA T.
(Dep. of Electrical Engineering, Shizuoka Inst. of Sci. and Technol., Fukuroi, Shizuoka 437-8555, JPN)
,
INATOMI Y.
(Inst. of Space and Astronautical Sci., Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Sagamihara, Kanagawa ...)
,
HAYAKAWA Y.
(Res. Inst. of Electronics, Shizuoka Univ., Johoku 3-5-1, Naka-ku, Hamamatsu, Shizuoka 432-8011, JPN)
資料名:
Journal of Crystal Growth
(Journal of Crystal Growth)
巻:
312
号:
19
ページ:
2677-2682
発行年:
2010年09月15日
JST資料番号:
B0942A
ISSN:
0022-0248
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
オランダ (NLD)
言語:
英語 (EN)