文献
J-GLOBAL ID:201202260281929096
整理番号:12A1547871
28nmHKMGの不揮発性データ蓄積を可能にするHfO2強誘電性
Ferroelectricity in HfO2 enables nonvolatile data storage in 28nm HKMG
著者 (16件):
MUELLER J.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
YURCHUK E.
(NaMLab GmbH, Dresden, DEU)
,
SCHLOESSER T.
(GLOBALFOUNDRIES, Dresden, DEU)
,
PAUL J.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
HOFFMANN R.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
MUELLER S.
(NaMLab GmbH, Dresden, DEU)
,
SLESAZECK S.
(NaMLab GmbH, Dresden, DEU)
,
POLAKOWSKI P.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
SUNDQVIST J.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
CZERNOHORSKY M.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
SEIDEL K.
(Fraunhofer Center Nanoelectronic Technol., Dresden, DEU)
,
BOSCHKE R.
(GLOBALFOUNDRIES, Dresden, DEU)
,
TRENTZSCH M.
(GLOBALFOUNDRIES, Dresden, DEU)
,
GEBAUER K.
(GLOBALFOUNDRIES, Dresden, DEU)
,
SCHROEDER U.
(NaMLab GmbH, Dresden, DEU)
,
MIKOLAJICK T.
(NaMLab GmbH, Dresden, DEU)
資料名:
Digest of Technical Papers. Symposium on VLSI Technology
(Digest of Technical Papers. Symposium on VLSI Technology)
巻:
2012
ページ:
25-26
発行年:
2012年
JST資料番号:
A0035B
ISSN:
0743-1562
資料種別:
会議録 (C)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)