文献
J-GLOBAL ID:201202260628466776
整理番号:12A0038340
(1 1 1)指向InGaAsチャネル金属-絶縁体-半導体電界効果トランジスタにおける電子移動度向上の原因
Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors
著者 (12件):
MIYATA Noriyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
ISHII Hiroyuki
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
URABE Yuji
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
ITATANI Taro
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
YASUDA Tetsuji
(National Inst. of Advanced Industrial Sci. and Technol. (AIST), Tsukuba, JPN)
,
YAMADA Hisashi
(Sumitomo Chemical, Tsukuba, JPN)
,
FUKUHARA Noboru
(Sumitomo Chemical, Tsukuba, JPN)
,
HATA Masahiko
(Sumitomo Chemical, Tsukuba, JPN)
,
DEURA Momoko
(Univ. Tokyo, Tokyo, JPN)
,
SUGIYAMA Masakazu
(Univ. Tokyo, Tokyo, JPN)
,
TAKENAKA Mitsuru
(Univ. Tokyo, Tokyo, JPN)
,
TAKAGI Shinichi
(Univ. Tokyo, Tokyo, JPN)
資料名:
Microelectronic Engineering
(Microelectronic Engineering)
巻:
88
号:
12
ページ:
3459-3461
発行年:
2011年12月
JST資料番号:
C0406B
ISSN:
0167-9317
CODEN:
MIENEF
資料種別:
逐次刊行物 (A)
発行国:
オランダ (NLD)
言語:
英語 (EN)