文献
J-GLOBAL ID:201302200505444454
整理番号:13A1820897
DCおよびACストレスのもとでの,HfSiONゲート誘電体を有するn-MOSFETにおける時間依存絶縁破壊(TDDB)分布
Time-dependent dielectric breakdown (TDDB) distribution in n-MOSFET with HfSiON gate dielectrics under DC and AC stressing
著者 (10件):
HIRANO Izumi
(Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
HIRANO Izumi
(Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, JPN)
,
NAKASAKI Yasushi
(Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
FUKATSU Shigeto
(Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
GOTO Masakazu
(Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
NAGATOMO Koji
(Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
INUMIYA Seiji
(Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
SEKINE Katsuyuki
(Semiconductor and Storage Products Co., Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
MITANI Yuichiro
(Corporate Res. & Dev. Center, Toshiba Corp., 8 Shinsugita-cho, Isogo-ku, Yokohama 235-8522, JPN)
,
YAMABE Kikuo
(Univ. of Tsukuba, 1-1-1 Tennodai, Tsukuba, Ibaraki 305-8572, JPN)
資料名:
Microelectronics Reliability
(Microelectronics Reliability)
巻:
53
号:
12
ページ:
1868-1874
発行年:
2013年12月
JST資料番号:
C0530A
ISSN:
0026-2714
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)