文献
J-GLOBAL ID:201302205509524888
整理番号:13A1130855
InGaN/GaN多重量子井戸発光ダイオードの意図的に形成したV形ピットを用いた効率と電気的性質の向上
Improvement of efficiency and electrical properties using intentionally formed V-shaped pits in InGaN/GaN multiple quantum well light-emitting diodes
著者 (8件):
HAN Sang-heon
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
LEE Dong-yul
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
SHIM Hyun-wook
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
WOOK LEE Jeong
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
KIM Dong-joon
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
YOON Sukho
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
SUN KIM Young
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
,
KIM Sung-tae
(LED Business, Samsung Electronics Co. Ltd., Giheung-gu, Yongin-si 446-711, KOR)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
102
号:
25
ページ:
251123-251123-4
発行年:
2013年06月24日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)