文献
J-GLOBAL ID:201302213683594480
整理番号:13A0956841
室温で大きな膜厚依存スイッチング比を示す電解質ゲートSmCoO3薄膜トランジスタ
Electrolyte-Gated SmCoO3 Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature
著者 (12件):
XIANG Ping-Hua
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
XIANG Ping-Hua
(JST-CREST, Kawaguchi, JPN)
,
ASANUMA Shutaro
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
ASANUMA Shutaro
(JST-CREST, Kawaguchi, JPN)
,
YAMADA Hiroyuki
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
SATO Hiroshi
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
INOUE Isao H.
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
AKOH Hiroshi
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
AKOH Hiroshi
(JST-CREST, Kawaguchi, JPN)
,
SAWA Akihito
(National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
,
KAWASAKI Masashi
,
IWASA Yoshihiro
資料名:
Advanced Materials
(Advanced Materials)
巻:
25
号:
15
ページ:
2158-2161
発行年:
2013年04月18日
JST資料番号:
W0001A
ISSN:
0935-9648
CODEN:
ADVMEW
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
ドイツ (DEU)
言語:
英語 (EN)