文献
J-GLOBAL ID:201302257617875883
整理番号:13A0009137
InGaNを基本とする発光ダイオードにおけるV欠陥によるキャリア捕獲とその漏洩電流とエレクトロルミネセンスに及ぼす影響
Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes
著者 (13件):
LE L. C.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
ZHAO D. G.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
JIANG D. S.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
LI L.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
WU L. L.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
CHEN P.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
LIU Z. S.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
,
LI Z. C.
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN)
,
FAN Y. M.
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN)
,
ZHU J. J.
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN)
,
WANG H.
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN)
,
ZHANG S. M.
(Suzhou Inst. of Nano-Tech and Nano-Bionics, Chinese Acad. of Sciences, Suzhou 215125, CHN)
,
YANG H.
(State Key Lab. on Integrated Optoelectronics, Inst. of Semiconductors, Chinese Acad. of Sciences, P.O. Box 912 ...)
資料名:
Applied Physics Letters
(Applied Physics Letters)
巻:
101
号:
25
ページ:
252110-252110-4
発行年:
2012年12月17日
JST資料番号:
H0613A
ISSN:
0003-6951
CODEN:
APPLAB
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)