文献
J-GLOBAL ID:201302284227130140
整理番号:13A0779539
スイッチング電力低減のための相変化メモリにおける変調ブロック共重合体ナノ構造の自己集合組み込み
Self-Assembled Incorporation of Modulated Block Copolymer Nanostructures in Phase-Change Memory for Switching Power Reduction
著者 (12件):
PARK Woon Ik
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
YOU Byoung Kuk
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
MUN Beom Ho
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
SEO Hyeon Kook
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
SEO Hyeon Kook
(IBS, Daejeon, KOR)
,
LEE Jeong Yong
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
LEE Jeong Yong
(IBS, Daejeon, KOR)
,
HOSAKA Sumio
(Gunma Univ., Gunma, JPN)
,
YIN You
(Gunma Univ., Gunma, JPN)
,
ROSS C. A.
(Massachusetts Inst. of Technol., Massachusetts, USA)
,
LEE Keon Jae
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
,
JUNG Yeon Sik
(Korea Advanced Inst. of Sci. and Technol. (KAIST), Daejeon, KOR)
資料名:
ACS Nano
(ACS Nano)
巻:
7
号:
3
ページ:
2651-2658
発行年:
2013年03月
JST資料番号:
W2326A
ISSN:
1936-0851
CODEN:
ANCAC3
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)