文献
J-GLOBAL ID:201402275882135196
整理番号:14A0892183
合成電界効果によるトンネル電界効果トランジスタの性能向上
Performance Enhancement of Tunnel Field-Effect Transistors by Synthetic Electric Field Effect
著者 (12件):
MORITA Yukinori
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
MORI Takahiro
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
MIGITA Shinji
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
MIZUBAYASHI Wataru
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
TANABE Akihito
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
FUKUDA Koichi
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
MATSUKAWA Takashi
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
ENDO Kazuhiko
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
O’UCHI Shinichi
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
LIU Yong Xun
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
MASAHARA Meishoku
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
,
OTA Hiroyuki
(National Inst. Advanced Industrial Sci. and Technol., Tsukuba, JPN)
資料名:
IEEE Electron Device Letters
(IEEE Electron Device Letters)
巻:
35
号:
7
ページ:
792-794
発行年:
2014年07月
JST資料番号:
B0344B
ISSN:
0741-3106
CODEN:
EDLEDZ
資料種別:
逐次刊行物 (A)
記事区分:
短報
発行国:
アメリカ合衆国 (USA)
言語:
英語 (EN)