文献
J-GLOBAL ID:201602212529077862
整理番号:16A1116729
光和周波発生と第二高調波発生により研究したH-Si(111)表面からの水素脱離の速度論
Hydrogen desorption kinetics from H-Si (111) surfaces studied by optical sum frequency generation and second harmonic generation
著者 (5件):
Sattar Md. Abdus
(School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan)
,
Hien Khuat Thi Thu
(School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan)
,
Miyauchi Yoshihiro
(Department of Applied physics, National Defense Academy of Japan, Hashirimizu 1-10-20, Yokosuka, Kanagawa, 239-8686, Japan)
,
Mizutani Goro
(School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan. mizutani@jaist.ac.jp)
,
Rutt Harvey N.
(School of Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK)
資料名:
Surface and Interface Analysis
(Surface and Interface Analysis)
巻:
48
号:
11
ページ:
1235-1239
発行年:
2016年11月
JST資料番号:
E0709A
ISSN:
0142-2421
CODEN:
SIANDQ
資料種別:
逐次刊行物 (A)
記事区分:
原著論文
発行国:
イギリス (GBR)
言語:
英語 (EN)